parameter symbol value unit collector-base voltage v c b o 700 v collector-emitter voltage v c e o 400 v emitter-base voltage v e b o 9 v collector current i c 4.0 a base current i b 2.0 a total dissipation at p t o t 75 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c MJE13005 description parameter symbol test conditions min. typ. max. unit collector cut-off current i c b o v c e =700v, i e =0 1.0 ma emitter cut-off current i e b o v e b =9v, i c =0 1.0 ma collector-emitter sustaining voltage v c e o i c =10ma, i b =0 400 v dc current gain h f e ( 1 ) v c e =5v, i c =1.0a 15 21 h f e ( 2 ) v c e =5v, i c =1.0a 21 32 collector-emitter saturation voltage v c e ( s a t ) i c =4.0a,i b =1.0a 1.0 v base-emitter saturation voltage v b e ( s a t ) i c =2.0a,i b =0.5a 1.6 v current gain bandwidth product f t v c e =10v, i c =0.5a 4 mhz output capacitance c o b v c b =10v,i e =0,f=0.1mhz 65 pf turn off time t s i b 1 =-i b 2 =1.6a,t p =25 s 2.5 4.0 us silicon npn power transistor product specification silicon npn, high power transistors in a plastic envelope, primarily for use in high-speed power switching circuits. electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) to-220 tiger electronic co.,ltd
|
